Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 12 vom: 23. März
1. Verfasser: Berhane, Amanuel M (VerfasserIn)
Weitere Verfasser: Jeong, Kwang-Yong, Bodrog, Zoltán, Fiedler, Saskia, Schröder, Tim, Triviño, Noelia Vico, Palacios, Tomás, Gali, Adam, Toth, Milos, Englund, Dirk, Aharonovich, Igor
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article cubic inclusions gallium nitride wafer narrow linewidth point defects single-photon sources
Beschreibung
Zusammenfassung:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies
Beschreibung:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201605092