Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment : A Typical Study on WS2

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 7 vom: 30. Feb.
1. Verfasser:	Chen, Ying (VerfasserIn)
Weitere Verfasser:	Gan, Lin, Li, Huiqiao, Ma, Ying, Zhai, Tianyou
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2017
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article chemical vapor deposition silanization uniform films


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245	1	0	\|a Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment \|b A Typical Study on WS2
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500			\|a Date Completed 18.07.2018
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large-size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS2 film up to 1 cm2 . The novel strategy is also verified for the synthesis of WSe2 and MoS2 uniform films, suggesting universality for TMD film fabrication
650		4	\|a Journal Article
650		4	\|a chemical vapor deposition
650		4	\|a silanization
650		4	\|a uniform films
700	1		\|a Gan, Lin \|e verfasserin \|4 aut
700	1		\|a Li, Huiqiao \|e verfasserin \|4 aut
700	1		\|a Ma, Ying \|e verfasserin \|4 aut
700	1		\|a Zhai, Tianyou \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Advanced materials (Deerfield Beach, Fla.) \|d 1998 \|g 29(2017), 7 vom: 30. Feb. \|w (DE-627)NLM098206397 \|x 1521-4095 \|7 nnns
773	1	8	\|g volume:29 \|g year:2017 \|g number:7 \|g day:30 \|g month:02
856	4	0	\|u http://dx.doi.org/10.1002/adma.201603550 \|3 Volltext
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