Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment A Typical Study on WS2

Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment : A Typical Study on WS2

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 7 vom: 30. Feb.
1. Verfasser: Chen, Ying (VerfasserIn)
Weitere Verfasser: Gan, Lin, Li, Huiqiao, Ma, Ying, Zhai, Tianyou
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article chemical vapor deposition silanization uniform films
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large-size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS2 film up to 1 cm2 . The novel strategy is also verified for the synthesis of WSe2 and MoS2 uniform films, suggesting universality for TMD film fabrication
Beschreibung:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201603550