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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201601489
|2 doi
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|a pubmed24n0882.xml
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|a (NLM)27690190
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Yuan, Shuoguo
|e verfasserin
|4 aut
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| 245 |
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|a Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 17.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices
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|a Journal Article
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|a 2D materials
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|a ferroelectric thin films
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|a field-effect transistors
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|a graphene
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|a pulsed laser deposition
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1 |
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|a Yang, Zhibin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xie, Chao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yan, Feng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Dai, Jiyan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lau, Shu Ping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chan, Helen L W
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hao, Jianhua
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 45 vom: 17. Dez., Seite 10048-10054
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:28
|g year:2016
|g number:45
|g day:17
|g month:12
|g pages:10048-10054
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|u http://dx.doi.org/10.1002/adma.201601489
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