Yuan, S., Yang, Z., Xie, C., Yan, F., Dai, J., Lau, S. P., . . . Hao, J. (2016). Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures. Advanced materials (Deerfield Beach, Fla.), 28(45), 10048. https://doi.org/10.1002/adma.201601489
Style de citation ChicagoYuan, Shuoguo, Zhibin Yang, Chao Xie, Feng Yan, Jiyan Dai, Shu Ping Lau, Helen L W. Chan, et Jianhua Hao. "Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures." Advanced Materials (Deerfield Beach, Fla.) 28, no. 45 (2016): 10048. https://dx.doi.org/10.1002/adma.201601489.
Style de citation MLAYuan, Shuoguo, et al. "Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures." Advanced Materials (Deerfield Beach, Fla.), vol. 28, no. 45, 2016, p. 10048.