Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 35 vom: 04. Sept., Seite 7736-44
1. Verfasser:	Nayak, Pradipta K (VerfasserIn)
Weitere Verfasser:	Wang, Zhenwei, Alshareef, Husam N
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2016
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article atomic layer deposition fully transparent thin-film transistors zinc oxide


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245	1	0	\|a Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition
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500			\|a Date Completed 17.07.2018
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices
650		4	\|a Journal Article
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650		4	\|a fully transparent
650		4	\|a thin-film transistors
650		4	\|a zinc oxide
700	1		\|a Wang, Zhenwei \|e verfasserin \|4 aut
700	1		\|a Alshareef, Husam N \|e verfasserin \|4 aut
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