Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 32 vom: 13. Aug., Seite 6852-9
1. Verfasser:	Qin, Qi Hang (VerfasserIn)
Weitere Verfasser:	Äkäslompolo, Laura, Tuomisto, Noora, Yao, Lide, Majumdar, Sayani, Vijayakumar, Jaianth, Casiraghi, Arianna, Inkinen, Sampo, Chen, Binbin, Zugarramurdi, Asier, Puska, Martti, van Dijken, Sebastiaan
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2016
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article Tsu-Esaki tunneling current formula ferroelectric tunnel junctions oxygen vacancy migration resistive switching transition metal oxides


LEADER	01000naa a22002652 4500
001	NLM260947431
003	DE-627
005	20231224194505.0
007	cr uuu---uuuuu
008	231224s2016 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1002/adma.201504519 \|2 doi
028	5	2	\|a pubmed24n0869.xml
035			\|a (DE-627)NLM260947431
035			\|a (NLM)27248832
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
100	1		\|a Qin, Qi Hang \|e verfasserin \|4 aut
245	1	0	\|a Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces
264		1	\|c 2016
336			\|a Text \|b txt \|2 rdacontent
337			\|a ƒaComputermedien \|b c \|2 rdamedia
338			\|a ƒa Online-Ressource \|b cr \|2 rdacarrier
500			\|a Date Completed 17.07.2018
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K
650		4	\|a Journal Article
650		4	\|a Tsu-Esaki tunneling current formula
650		4	\|a ferroelectric tunnel junctions
650		4	\|a oxygen vacancy migration
650		4	\|a resistive switching
650		4	\|a transition metal oxides
700	1		\|a Äkäslompolo, Laura \|e verfasserin \|4 aut
700	1		\|a Tuomisto, Noora \|e verfasserin \|4 aut
700	1		\|a Yao, Lide \|e verfasserin \|4 aut
700	1		\|a Majumdar, Sayani \|e verfasserin \|4 aut
700	1		\|a Vijayakumar, Jaianth \|e verfasserin \|4 aut
700	1		\|a Casiraghi, Arianna \|e verfasserin \|4 aut
700	1		\|a Inkinen, Sampo \|e verfasserin \|4 aut
700	1		\|a Chen, Binbin \|e verfasserin \|4 aut
700	1		\|a Zugarramurdi, Asier \|e verfasserin \|4 aut
700	1		\|a Puska, Martti \|e verfasserin \|4 aut
700	1		\|a van Dijken, Sebastiaan \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Advanced materials (Deerfield Beach, Fla.) \|d 1998 \|g 28(2016), 32 vom: 13. Aug., Seite 6852-9 \|w (DE-627)NLM098206397 \|x 1521-4095 \|7 nnns
773	1	8	\|g volume:28 \|g year:2016 \|g number:32 \|g day:13 \|g month:08 \|g pages:6852-9
856	4	0	\|u http://dx.doi.org/10.1002/adma.201504519 \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_NLM
912			\|a GBV_ILN_350
951			\|a AR
952			\|d 28 \|j 2016 \|e 32 \|b 13 \|c 08 \|h 6852-9