Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation
Williamson-Hall (WH) analysis is a well established method for studying the microstructural properties of epilayers grown on foreign substrates. However, the method becomes inapplicable in specific cases where the structure factor considerations and the presence of anti-phase domains forbid the data...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 23(2016), 1 vom: 25. Jan., Seite 238-43
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| 1. Verfasser: |
Kumar, Ravi
(VerfasserIn) |
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| Weitere Verfasser: |
Dixit, V K,
Sinha, A K,
Ganguli, Tapas,
Mukherjee, C,
Oak, S M,
Sharma, T K |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2016
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation
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| Schlagworte: | Journal Article
GaAs epilayers
HRXRD
Williamson–Hall analysis
coherence length
tilt
twist |
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