In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 47 vom: 16. Dez., Seite 7767-74
Auteur principal: Tian, He (Auteur)
Autres auteurs: Zhao, Haiming, Wang, Xue-Feng, Xie, Qian-Yi, Chen, Hong-Yu, Mohammad, Mohammad Ali, Li, Cheng, Mi, Wen-Tian, Bie, Zhi, Yeh, Chao-Hui, Yang, Yi, Wong, H-S Philip, Chiu, Po-Wen, Ren, Tian-Ling
Format: Article en ligne
Langue:English
Publié: 2015
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article bilayer graphene gate controlled in situ resistive memory switching windows