In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 47 vom: 16. Dez., Seite 7767-74
1. Verfasser: Tian, He (VerfasserIn)
Weitere Verfasser: Zhao, Haiming, Wang, Xue-Feng, Xie, Qian-Yi, Chen, Hong-Yu, Mohammad, Mohammad Ali, Li, Cheng, Mi, Wen-Tian, Bie, Zhi, Yeh, Chao-Hui, Yang, Yi, Wong, H-S Philip, Chiu, Po-Wen, Ren, Tian-Ling
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article bilayer graphene gate controlled in situ resistive memory switching windows
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density
Beschreibung:Date Completed 10.05.2016
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201503125