In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 47 vom: 16. Dez., Seite 7767-74
1. Verfasser: Tian, He (VerfasserIn)
Weitere Verfasser: Zhao, Haiming, Wang, Xue-Feng, Xie, Qian-Yi, Chen, Hong-Yu, Mohammad, Mohammad Ali, Li, Cheng, Mi, Wen-Tian, Bie, Zhi, Yeh, Chao-Hui, Yang, Yi, Wong, H-S Philip, Chiu, Po-Wen, Ren, Tian-Ling
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article bilayer graphene gate controlled in situ resistive memory switching windows
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520 |a A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density 
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700 1 |a Zhao, Haiming  |e verfasserin  |4 aut 
700 1 |a Wang, Xue-Feng  |e verfasserin  |4 aut 
700 1 |a Xie, Qian-Yi  |e verfasserin  |4 aut 
700 1 |a Chen, Hong-Yu  |e verfasserin  |4 aut 
700 1 |a Mohammad, Mohammad Ali  |e verfasserin  |4 aut 
700 1 |a Li, Cheng  |e verfasserin  |4 aut 
700 1 |a Mi, Wen-Tian  |e verfasserin  |4 aut 
700 1 |a Bie, Zhi  |e verfasserin  |4 aut 
700 1 |a Yeh, Chao-Hui  |e verfasserin  |4 aut 
700 1 |a Yang, Yi  |e verfasserin  |4 aut 
700 1 |a Wong, H-S Philip  |e verfasserin  |4 aut 
700 1 |a Chiu, Po-Wen  |e verfasserin  |4 aut 
700 1 |a Ren, Tian-Ling  |e verfasserin  |4 aut 
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