In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 47 vom: 16. Dez., Seite 7767-74
Auteur principal: Tian, He (Auteur)
Autres auteurs: Zhao, Haiming, Wang, Xue-Feng, Xie, Qian-Yi, Chen, Hong-Yu, Mohammad, Mohammad Ali, Li, Cheng, Mi, Wen-Tian, Bie, Zhi, Yeh, Chao-Hui, Yang, Yi, Wong, H-S Philip, Chiu, Po-Wen, Ren, Tian-Ling
Format: Article en ligne
Langue:English
Publié: 2015
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article bilayer graphene gate controlled in situ resistive memory switching windows
Description
Résumé:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density
Description:Date Completed 10.05.2016
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201503125