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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201503864
|2 doi
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|a pubmed24n0846.xml
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|a (NLM)26497945
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Xu, Kai
|e verfasserin
|4 aut
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|a Ultrasensitive Phototransistors Based on Few-Layered HfS2
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|c 2015
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 10.05.2016
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a An ultrathin HfS2 -based ultrasensitive phototransistor is systematically studied. Au-contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10(7) , ultrahigh photoresponsivity over 890 A W(-1) , and photogain over 2300. Moreover, the response time is strongly dependent on the back-gate voltage and shows a reverse trend for Au and Cr metals
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|a Journal Article
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|a HfS2
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|a flake thickness
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|a metal contacts
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|a phototransistors
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|a responsivity
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1 |
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|a Wang, Zhenxing
|e verfasserin
|4 aut
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|a Wang, Feng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Yun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Fengmei
|e verfasserin
|4 aut
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|a Yin, Lei
|e verfasserin
|4 aut
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|a Jiang, Chao
|e verfasserin
|4 aut
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| 700 |
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|a He, Jun
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 47 vom: 16. Dez., Seite 7881-7
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:27
|g year:2015
|g number:47
|g day:16
|g month:12
|g pages:7881-7
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|u http://dx.doi.org/10.1002/adma.201503864
|3 Volltext
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