Ultrasensitive Phototransistors Based on Few-Layered HfS2

Ultrasensitive Phototransistors Based on Few-Layered HfS2

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 47 vom: 16. Dez., Seite 7881-7
1. Verfasser: Xu, Kai (VerfasserIn)
Weitere Verfasser: Wang, Zhenxing, Wang, Feng, Huang, Yun, Wang, Fengmei, Yin, Lei, Jiang, Chao, He, Jun
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article HfS2 flake thickness metal contacts phototransistors responsivity
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An ultrathin HfS2 -based ultrasensitive phototransistor is systematically studied. Au-contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10(7) , ultrahigh photoresponsivity over 890 A W(-1) , and photogain over 2300. Moreover, the response time is strongly dependent on the back-gate voltage and shows a reverse trend for Au and Cr metals
Beschreibung:Date Completed 10.05.2016
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201503864