Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors

Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 42 vom: Nov., Seite 6612-9
1. Verfasser: Lin, Yen-Fu (VerfasserIn)
Weitere Verfasser: Xu, Yong, Lin, Che-Yi, Suen, Yuen-Wuu, Yamamoto, Mahito, Nakaharai, Shu, Ueno, Keiji, Tsukagoshi, Kazuhito
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article MoTe2 low-frequency noise nanoscale electronics random telegraph signals transition metal dichalcogenides
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520 |a Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated 
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650 4 |a low-frequency noise 
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700 1 |a Lin, Che-Yi  |e verfasserin  |4 aut 
700 1 |a Suen, Yuen-Wuu  |e verfasserin  |4 aut 
700 1 |a Yamamoto, Mahito  |e verfasserin  |4 aut 
700 1 |a Nakaharai, Shu  |e verfasserin  |4 aut 
700 1 |a Ueno, Keiji  |e verfasserin  |4 aut 
700 1 |a Tsukagoshi, Kazuhito  |e verfasserin  |4 aut 
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