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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201502758
|2 doi
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|a pubmed24n0836.xml
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|a (DE-627)NLM251064301
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|a (NLM)26193454
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|a DE-627
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|e rakwb
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|a eng
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1 |
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|a Chen, Jui-Yuan
|e verfasserin
|4 aut
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|a Switching Kinetic of VCM-Based Memristor
|b Evolution and Positioning of Nanofilament
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 20.11.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The filament in aAu/Ta2 O5 /Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects
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|a Journal Article
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|a in situ TEM
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|a memristors
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|a nanofilaments
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|a resistive switching
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|a valence change memories (VCM)
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| 700 |
1 |
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|a Huang, Chun-Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chiu, Chung-Hua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Yu-Ting
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Wen-Wei
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 34 vom: 09. Sept., Seite 5028-33
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:27
|g year:2015
|g number:34
|g day:09
|g month:09
|g pages:5028-33
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|u http://dx.doi.org/10.1002/adma.201502758
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