Switching Kinetic of VCM-Based Memristor Evolution and Positioning of Nanofilament

Switching Kinetic of VCM-Based Memristor : Evolution and Positioning of Nanofilament

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 34 vom: 09. Sept., Seite 5028-33
1. Verfasser: Chen, Jui-Yuan (VerfasserIn)
Weitere Verfasser: Huang, Chun-Wei, Chiu, Chung-Hua, Huang, Yu-Ting, Wu, Wen-Wei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article in situ TEM memristors nanofilaments resistive switching valence change memories (VCM)
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The filament in aAu/Ta2 O5 /Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects
Beschreibung:Date Completed 20.11.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201502758