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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2014.006846
|2 doi
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|a pubmed24n0833.xml
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|a (DE-627)NLM249886057
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|a (NLM)26067035
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Yokoyama, Tsuyoshi
|e verfasserin
|4 aut
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|a Highly piezoelectric co-doped AlN thin films for wideband FBAR applications
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 11.08.2015
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|a Date Revised 13.06.2015
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and the theoretical piezoelectric properties were confirmed by experimentally depositing thin films of magnesium (Mg) and zirconium (Zr) co-doped AlN (Mg-Zr-doped AlN). The Mg-Zrdoped AlN thin films were prepared on Si (100) substrates by using a triple-radio-frequency magnetron reactive co-sputtering system. The crystal structures and piezoelectric coefficients (d33) were investigated as a function of the concentrations, which were measured by X-ray diffraction and a piezometer. The results show that the d33 of Mg-Zr-doped AlN at total Mg and Zr concentrations (both expressed as β) of 0.35 was 280% larger than that of pure AlN. The experimentally measured parameter of the crystal structure and d33 of Mg-Zr-doped AlN (plotted as functions of total Mg and Zr concentrations) were in very close agreement with the corresponding values obtained by the first-principle calculations. Thin film bulk acoustic wave resonators (FBAR) employing (Mg,Zr)0.13Al0.87N and (Mg, Hf)0.13 Al0.87N as a piezoelectric thin film were fabricated, and their resonant characteristics were evaluated. The measured electromechanical coupling coefficient increased from 7.1% for pure AlN to 8.5% for Mg-Zr-doped AlN and 10.0% for Mg- Hf-doped AlN. These results indicate that co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) films have potential as piezoelectric thin films for wideband RF applications
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|a Journal Article
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|a Iwazaki, Yoshiki
|e verfasserin
|4 aut
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|a Onda, Yosuke
|e verfasserin
|4 aut
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|a Nishihara, Tokihiro
|e verfasserin
|4 aut
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|a Sasajima, Yuichi
|e verfasserin
|4 aut
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1 |
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|a Ueda, Masanori
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 62(2015), 6 vom: 14. Juni, Seite 1007-15
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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| 773 |
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|g volume:62
|g year:2015
|g number:6
|g day:14
|g month:06
|g pages:1007-15
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|u http://dx.doi.org/10.1109/TUFFC.2014.006846
|3 Volltext
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