Highly piezoelectric co-doped AlN thin films for wideband FBAR applications
We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and...
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Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 62(2015), 6 vom: 14. Juni, Seite 1007-15
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| 1. Verfasser: |
Yokoyama, Tsuyoshi
(VerfasserIn) |
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| Weitere Verfasser: |
Iwazaki, Yoshiki,
Onda, Yosuke,
Nishihara, Tokihiro,
Sasajima, Yuichi,
Ueda, Masanori |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2015
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Journal Article |
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