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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201500040
|2 doi
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|a pubmed24n0823.xml
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|a (DE-627)NLM247135763
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|a (NLM)25776865
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|a DE-627
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|a eng
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|a Shin, Dong Hee
|e verfasserin
|4 aut
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|a Graphene/Si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 08.01.2016
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Si quantum dots
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|a graphene
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|a heterojunction diodes
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|a photodetectors
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|a quantum confinement effect
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|a Silicon Dioxide
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|a 7631-86-9
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|a Graphite
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|a Z4152N8IUI
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| 700 |
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|a Kim, Sung
|e verfasserin
|4 aut
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|a Kim, Jong Min
|e verfasserin
|4 aut
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|a Jang, Chan Wook
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|a Kim, Ju Hwan
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|a Lee, Kyeong Won
|e verfasserin
|4 aut
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|a Kim, Jungkil
|e verfasserin
|4 aut
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|a Oh, Si Duck
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|a Lee, Dae Hun
|e verfasserin
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|a Kang, Soo Seok
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|a Kim, Chang Oh
|e verfasserin
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|a Choi, Suk-Ho
|e verfasserin
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|a Kim, Kyung Joong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 16 vom: 24. Apr., Seite 2614-20
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:27
|g year:2015
|g number:16
|g day:24
|g month:04
|g pages:2614-20
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|u http://dx.doi.org/10.1002/adma.201500040
|3 Volltext
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