Graphene/Si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect

Graphene/Si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 16 vom: 24. Apr., Seite 2614-20
1. Verfasser: Shin, Dong Hee (VerfasserIn)
Weitere Verfasser: Kim, Sung, Kim, Jong Min, Jang, Chan Wook, Kim, Ju Hwan, Lee, Kyeong Won, Kim, Jungkil, Oh, Si Duck, Lee, Dae Hun, Kang, Soo Seok, Kim, Chang Oh, Choi, Suk-Ho, Kim, Kyung Joong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Si quantum dots graphene heterojunction diodes photodetectors quantum confinement effect Silicon Dioxide 7631-86-9 Graphite mehr... 7782-42-5 Silicon Z4152N8IUI
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism
Beschreibung:Date Completed 08.01.2016
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201500040