Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 48 vom: 23. Dez., Seite 8203-9
1. Verfasser: Guo, Nan (VerfasserIn)
Weitere Verfasser: Hu, Weida, Liao, Lei, Yip, SenPo, Ho, Johnny C, Miao, Jinshui, Zhang, Zhi, Zou, Jin, Jiang, Tao, Wu, Shiwei, Chen, Xiaoshuang, Lu, Wei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article InAs nanowires majority carrier transport photogating effect phototransistors
LEADER 01000naa a22002652 4500
001 NLM243125798
003 DE-627
005 20231224131850.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201403664  |2 doi 
028 5 2 |a pubmed24n0810.xml 
035 |a (DE-627)NLM243125798 
035 |a (NLM)25352322 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Guo, Nan  |e verfasserin  |4 aut 
245 1 0 |a Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 21.05.2015 
500 |a Date Revised 01.10.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a built-in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature 
650 4 |a Journal Article 
650 4 |a InAs nanowires 
650 4 |a majority carrier transport 
650 4 |a photogating effect 
650 4 |a phototransistors 
700 1 |a Hu, Weida  |e verfasserin  |4 aut 
700 1 |a Liao, Lei  |e verfasserin  |4 aut 
700 1 |a Yip, SenPo  |e verfasserin  |4 aut 
700 1 |a Ho, Johnny C  |e verfasserin  |4 aut 
700 1 |a Miao, Jinshui  |e verfasserin  |4 aut 
700 1 |a Zhang, Zhi  |e verfasserin  |4 aut 
700 1 |a Zou, Jin  |e verfasserin  |4 aut 
700 1 |a Jiang, Tao  |e verfasserin  |4 aut 
700 1 |a Wu, Shiwei  |e verfasserin  |4 aut 
700 1 |a Chen, Xiaoshuang  |e verfasserin  |4 aut 
700 1 |a Lu, Wei  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 48 vom: 23. Dez., Seite 8203-9  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:48  |g day:23  |g month:12  |g pages:8203-9 
856 4 0 |u http://dx.doi.org/10.1002/adma.201403664  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 48  |b 23  |c 12  |h 8203-9