APA Zitierstil

Guo, N., Hu, W., Liao, L., Yip, S., Ho, J. C., Miao, J., . . . Lu, W. (2014). Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature. Advanced materials (Deerfield Beach, Fla.), 26(48), 8203. https://doi.org/10.1002/adma.201403664

Chicago Zitierstil

Guo, Nan, et al. "Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature." Advanced Materials (Deerfield Beach, Fla.) 26, no. 48 (2014): 8203. https://dx.doi.org/10.1002/adma.201403664.

MLA Zitierstil

Guo, Nan, et al. "Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature." Advanced Materials (Deerfield Beach, Fla.), vol. 26, no. 48, 2014, p. 8203.

Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.