Ferroelectricity in Si-doped HfO2 revealed a binary lead-free ferroelectric

Ferroelectricity in Si-doped HfO2 revealed : a binary lead-free ferroelectric

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 48 vom: 23. Dez., Seite 8198-202
1. Verfasser: Martin, Dominik (VerfasserIn)
Weitere Verfasser: Müller, Johannes, Schenk, Tony, Arruda, Thomas M, Kumar, Amit, Strelcov, Evgheni, Yurchuk, Ekaterina, Müller, Stefan, Pohl, Darius, Schröder, Uwe, Kalinin, Sergei V, Mikolajick, Thomas
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article HfO2 Si-doping antiferroelectricity electromechanical response mechanisms ferroelectricity piezoresponse force microscopy (PFM)
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior
Beschreibung:Date Completed 21.05.2015
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201403115