Martin, D., Müller, J., Schenk, T., Arruda, T. M., Kumar, A., Strelcov, E., . . . Mikolajick, T. (2014). Ferroelectricity in Si-doped HfO2 revealed: A binary lead-free ferroelectric. Advanced materials (Deerfield Beach, Fla.), 26(48), 8198. https://doi.org/10.1002/adma.201403115
Chicago ZitierstilMartin, Dominik, et al. "Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric." Advanced Materials (Deerfield Beach, Fla.) 26, no. 48 (2014): 8198. https://dx.doi.org/10.1002/adma.201403115.
MLA ZitierstilMartin, Dominik, et al. "Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric." Advanced Materials (Deerfield Beach, Fla.), vol. 26, no. 48, 2014, p. 8198.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.