|
|
|
|
| LEADER |
01000naa a22002652 4500 |
| 001 |
NLM241962439 |
| 003 |
DE-627 |
| 005 |
20231224125355.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231224s2014 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1021/la503481r
|2 doi
|
| 028 |
5 |
2 |
|a pubmed24n0806.xml
|
| 035 |
|
|
|a (DE-627)NLM241962439
|
| 035 |
|
|
|a (NLM)25227560
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Zhao, Haoyan
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Volatilize-controlled oriented growth of the single-crystal layer for organic field-effect transistors
|
| 264 |
|
1 |
|c 2014
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Completed 21.05.2015
|
| 500 |
|
|
|a Date Revised 14.10.2014
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a We demonstrate a solution method of volatilize-controlled oriented growth (VOG) to fabricate aligned single crystals of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) on a Si/SiO2 substrate. Through controlling the evaporation rate of the solvent, large-area-aligned single-crystal layers can be achieved on several substrates at the same time, covering over 90% on 2 × 1 cm substrates. The method provides a low-cost, maneuverable technology, which has potential to be used in batch production. We find that the atmosphere of the solvent with high dissolving capacity is in favor of aligned single-crystal growth. Besides, the growth mechanism of the VOG method is investigated in this paper. Top-contact organic field-effect transistors based on the single crystals of TIPS pentacene are achieved on a Si/SiO2 substrate. The optimal device exhibits a field-effect mobility of 0.42 cm(2) V(-1) s(-1) and an on/off current ratio of 10(5). Our research indicates that the VOG method is promising in single-crystal growth on a Si/SiO2 substrate for commercial production
|
| 650 |
|
4 |
|a Journal Article
|
| 700 |
1 |
|
|a Li, Dong
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Dong, Guifang
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Duan, Lian
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Liu, Xiaohui
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wang, Liduo
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 30(2014), 40 vom: 14. Okt., Seite 12082-8
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
|
| 773 |
1 |
8 |
|g volume:30
|g year:2014
|g number:40
|g day:14
|g month:10
|g pages:12082-8
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1021/la503481r
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_22
|
| 912 |
|
|
|a GBV_ILN_350
|
| 912 |
|
|
|a GBV_ILN_721
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 30
|j 2014
|e 40
|b 14
|c 10
|h 12082-8
|