Volatilize-controlled oriented growth of the single-crystal layer for organic field-effect transistors
We demonstrate a solution method of volatilize-controlled oriented growth (VOG) to fabricate aligned single crystals of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) on a Si/SiO2 substrate. Through controlling the evaporation rate of the solvent, large-area-aligned single-crystal lay...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 30(2014), 40 vom: 14. Okt., Seite 12082-8 |
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| Weitere Verfasser: | , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2014
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |
| Zusammenfassung: | We demonstrate a solution method of volatilize-controlled oriented growth (VOG) to fabricate aligned single crystals of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) on a Si/SiO2 substrate. Through controlling the evaporation rate of the solvent, large-area-aligned single-crystal layers can be achieved on several substrates at the same time, covering over 90% on 2 × 1 cm substrates. The method provides a low-cost, maneuverable technology, which has potential to be used in batch production. We find that the atmosphere of the solvent with high dissolving capacity is in favor of aligned single-crystal growth. Besides, the growth mechanism of the VOG method is investigated in this paper. Top-contact organic field-effect transistors based on the single crystals of TIPS pentacene are achieved on a Si/SiO2 substrate. The optimal device exhibits a field-effect mobility of 0.42 cm(2) V(-1) s(-1) and an on/off current ratio of 10(5). Our research indicates that the VOG method is promising in single-crystal growth on a Si/SiO2 substrate for commercial production |
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| Beschreibung: | Date Completed 21.05.2015 Date Revised 14.10.2014 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1520-5827 |
| DOI: | 10.1021/la503481r |