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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201401955
|2 doi
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|a pubmed24n0806.xml
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|a (DE-627)NLM241888069
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|a (NLM)25219518
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Jeon, Sanghun
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 21.05.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range
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|a Journal Article
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|a nanocrystalline oxide semiconductors
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|a photoconductivity
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|a thin-film transistors
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|a transparent photosensors
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|a Song, Ihun
|e verfasserin
|4 aut
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1 |
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|a Lee, Sungsik
|e verfasserin
|4 aut
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1 |
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|a Ryu, Byungki
|e verfasserin
|4 aut
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|a Ahn, Seung-Eon
|e verfasserin
|4 aut
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|a Lee, Eunha
|e verfasserin
|4 aut
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|a Kim, Young
|e verfasserin
|4 aut
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|a Nathan, Arokia
|e verfasserin
|4 aut
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|a Robertson, John
|e verfasserin
|4 aut
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|a Chung, U-In
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 41 vom: 05. Nov., Seite 7102-9
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:26
|g year:2014
|g number:41
|g day:05
|g month:11
|g pages:7102-9
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|u http://dx.doi.org/10.1002/adma.201401955
|3 Volltext
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