Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects

Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 41 vom: 05. Nov., Seite 7102-9
1. Verfasser: Jeon, Sanghun (VerfasserIn)
Weitere Verfasser: Song, Ihun, Lee, Sungsik, Ryu, Byungki, Ahn, Seung-Eon, Lee, Eunha, Kim, Young, Nathan, Arokia, Robertson, John, Chung, U-In
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article nanocrystalline oxide semiconductors photoconductivity thin-film transistors transparent photosensors
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range
Beschreibung:Date Completed 21.05.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201401955