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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201402427
|2 doi
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|a pubmed24n0804.xml
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|a (DE-627)NLM241398703
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|a (NLM)25167845
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
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|a Feng, Wei
|e verfasserin
|4 aut
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|a Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 21.05.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The back gate multilayer InSe FETs exhibit ultrahigh carrier mobilities, surpassing all the reported layer semiconductor based electronics with the same device configuration, which is achieved by the suppression of the carrier scattering from interfacial coulomb impurities or surface polar phonons at the interface of an oxidized dielectric substrate. The room-temperature mobilities of multilayer InSe transistors increase from 64 cm(2)V(-1)s(-1) to 1055 cm(2)V(-1)s(-1) using a bilayer dielectric of poly-(methyl methacrylate) (PMMA)/Al2O3. The transistors also have high current on/off ratios of 1 × 10(8), low standby power dissipation, and robust current saturation in a broad voltage range
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a carrier scatter
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|a field-effect transistor
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|a indium selenide
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|a mobility
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|a two dimensional layer semiconductor
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|a Zheng, Wei
|e verfasserin
|4 aut
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|a Cao, Wenwu
|e verfasserin
|4 aut
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|a Hu, PingAn
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 38 vom: 29. Okt., Seite 6587-93
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:26
|g year:2014
|g number:38
|g day:29
|g month:10
|g pages:6587-93
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|u http://dx.doi.org/10.1002/adma.201402427
|3 Volltext
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