Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

von Lü, Weiming
Veröffentlicht in: Advanced materials (Deerfield Beach, Fla.) (2017)

Determination of full set material constants of [011]c poled 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 single crystal from one sample

von Li, Shiyang
Veröffentlicht in: Applied physics letters (2014)

Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface

von Feng, Wei
Veröffentlicht in: Advanced materials (Deerfield Beach, Fla.) (2014)