Interface engineering for high-performance top-gated MoS2 field-effect transistors

Interface engineering for high-performance top-gated MoS2 field-effect transistors

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 36 vom: 29. Sept., Seite 6255-61
1. Verfasser: Zou, Xuming (VerfasserIn)
Weitere Verfasser: Wang, Jingli, Chiu, Chung-Hua, Wu, Yun, Xiao, Xiangheng, Jiang, Changzhong, Wu, Wen-Wei, Mai, Liqiang, Chen, Tangsheng, Li, Jinchai, Ho, Johnny C, Liao, Lei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't MoS2 interface engineering top-gated transistors two-dimensional materials
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520 |a Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS2 transistor reported to date 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a MoS2 
650 4 |a interface engineering 
650 4 |a top-gated 
650 4 |a transistors 
650 4 |a two-dimensional materials 
700 1 |a Wang, Jingli  |e verfasserin  |4 aut 
700 1 |a Chiu, Chung-Hua  |e verfasserin  |4 aut 
700 1 |a Wu, Yun  |e verfasserin  |4 aut 
700 1 |a Xiao, Xiangheng  |e verfasserin  |4 aut 
700 1 |a Jiang, Changzhong  |e verfasserin  |4 aut 
700 1 |a Wu, Wen-Wei  |e verfasserin  |4 aut 
700 1 |a Mai, Liqiang  |e verfasserin  |4 aut 
700 1 |a Chen, Tangsheng  |e verfasserin  |4 aut 
700 1 |a Li, Jinchai  |e verfasserin  |4 aut 
700 1 |a Ho, Johnny C  |e verfasserin  |4 aut 
700 1 |a Liao, Lei  |e verfasserin  |4 aut 
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