Interface engineering for high-performance top-gated MoS2 field-effect transistors
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 36 vom: 29. Sept., Seite 6255-61 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2014
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article Research Support, Non-U.S. Gov't MoS2 interface engineering top-gated transistors two-dimensional materials |
Zusammenfassung: | © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS2 transistor reported to date |
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Beschreibung: | Date Completed 21.05.2015 Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.201402008 |