Intrinsically switchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators
This paper presents a voltage-controlled, highquality factor (Q) composite thin-film bulk acoustic resonator (FBAR) at 1.28 GHz. The composite FBAR consists of a thin layer of barium strontium titanate (BST) that is sandwiched between two electrodes deposited on a silicon-on-insulator (SOI) wafer. T...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 61(2014), 2 vom: 28. Feb., Seite 231-8
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| 1. Verfasser: |
Sis, Seyit Ahmet
(VerfasserIn) |
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| Weitere Verfasser: |
Lee, Seungku,
Lee, Victor,
Bayraktaroglu, Adrian K,
Phillips, Jamie D,
Mortazawi, Amir |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2014
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Evaluation Study
Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Membranes, Artificial
Silicon
Z4152N8IUI |
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