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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2014.6722609
|2 doi
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|a pubmed24n0783.xml
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|a (DE-627)NLM23494109X
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|a (NLM)24474130
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Sis, Seyit Ahmet
|e verfasserin
|4 aut
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|a Intrinsically switchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 23.09.2014
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|a Date Revised 10.12.2019
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|a published: Print
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|a Citation Status MEDLINE
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|a This paper presents a voltage-controlled, highquality factor (Q) composite thin-film bulk acoustic resonator (FBAR) at 1.28 GHz. The composite FBAR consists of a thin layer of barium strontium titanate (BST) that is sandwiched between two electrodes deposited on a silicon-on-insulator (SOI) wafer. The BST layer, which has a strong electrostrictive effect, is used for electromechanical transduction by means of its voltage-induced piezoelectricity. The silicon layer, with its low mechanical loss, increases the Q of the resonator. The composite FBAR presented here exhibits Qs exceeding 800 with a resonance frequency and Q product (f × Q) of 1026 GHz
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|a Evaluation Study
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|a Journal Article
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Membranes, Artificial
|2 NLM
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|a Silicon
|2 NLM
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|a Z4152N8IUI
|2 NLM
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|a Lee, Seungku
|e verfasserin
|4 aut
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|a Lee, Victor
|e verfasserin
|4 aut
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|a Bayraktaroglu, Adrian K
|e verfasserin
|4 aut
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|a Phillips, Jamie D
|e verfasserin
|4 aut
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|a Mortazawi, Amir
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 61(2014), 2 vom: 28. Feb., Seite 231-8
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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| 773 |
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|g volume:61
|g year:2014
|g number:2
|g day:28
|g month:02
|g pages:231-8
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|u http://dx.doi.org/10.1109/TUFFC.2014.6722609
|3 Volltext
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|d 61
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|h 231-8
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