High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films

High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 33 vom: 06. Sept., Seite 4663-7
Auteur principal: Naab, Benjamin D (Auteur)
Autres auteurs: Himmelberger, Scott, Diao, Ying, Vandewal, Koen, Wei, Peng, Lussem, Björn, Salleo, Alberto, Bao, Zhenan
Format: Article en ligne
Langue:English
Publié: 2013
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article blend aligned crystals complementary inverters electron traps grain boundaries organic electronics
Description
Résumé:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films
Description:Date Completed 01.05.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201205098