APA Zitierstil

Naab, B. D., Himmelberger, S., Diao, Y., Vandewal, K., Wei, P., Lussem, B., . . . Bao, Z. (2013). High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films. Advanced materials (Deerfield Beach, Fla.), 25(33), 4663. https://doi.org/10.1002/adma.201205098

Chicago Zitierstil

Naab, Benjamin D., Scott Himmelberger, Ying Diao, Koen Vandewal, Peng Wei, Björn Lussem, Alberto Salleo, und Zhenan Bao. "High Mobility N-type Transistors Based on Solution-sheared Doped 6,13-bis(triisopropylsilylethynyl)pentacene Thin Films." Advanced Materials (Deerfield Beach, Fla.) 25, no. 33 (2013): 4663. https://dx.doi.org/10.1002/adma.201205098.

MLA Zitierstil

Naab, Benjamin D., et al. "High Mobility N-type Transistors Based on Solution-sheared Doped 6,13-bis(triisopropylsilylethynyl)pentacene Thin Films." Advanced Materials (Deerfield Beach, Fla.), vol. 25, no. 33, 2013, p. 4663.