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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201301362
|2 doi
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|a pubmed24n0761.xml
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|a (DE-627)NLM228496985
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|a (NLM)23784849
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Han, Ning
|e verfasserin
|4 aut
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|a Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 10.03.2014
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|a Date Revised 09.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a III-V nanowire field-effect transistors
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|a contact printing
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|a inverters
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|a metal decoration
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|a n-channel metal-oxide-semiconductor (NMOS)
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|a threshold voltage modulation
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|a Wang, Fengyun
|e verfasserin
|4 aut
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|a Hou, Jared J
|e verfasserin
|4 aut
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|a Yip, Sen Po
|e verfasserin
|4 aut
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1 |
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|a Lin, Hao
|e verfasserin
|4 aut
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1 |
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|a Xiu, Fei
|e verfasserin
|4 aut
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1 |
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|a Fang, Ming
|e verfasserin
|4 aut
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1 |
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|a Yang, Zaixing
|e verfasserin
|4 aut
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1 |
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|a Shi, Xiaoling
|e verfasserin
|4 aut
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|a Dong, Guofa
|e verfasserin
|4 aut
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|a Hung, Tak Fu
|e verfasserin
|4 aut
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|a Ho, Johnny C
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 32 vom: 27. Aug., Seite 4445-51
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:25
|g year:2013
|g number:32
|g day:27
|g month:08
|g pages:4445-51
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|u http://dx.doi.org/10.1002/adma.201301362
|3 Volltext
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|d 25
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