Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 32 vom: 27. Aug., Seite 4445-51
1. Verfasser: Han, Ning (VerfasserIn)
Weitere Verfasser: Wang, Fengyun, Hou, Jared J, Yip, Sen Po, Lin, Hao, Xiu, Fei, Fang, Ming, Yang, Zaixing, Shi, Xiaoling, Dong, Guofa, Hung, Tak Fu, Ho, Johnny C
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't III-V nanowire field-effect transistors contact printing inverters metal decoration n-channel metal-oxide-semiconductor (NMOS) threshold voltage modulation
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters
Beschreibung:Date Completed 10.03.2014
Date Revised 09.03.2022
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201301362