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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201204572
|2 doi
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|a pubmed24n0749.xml
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|a eng
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|a Yoon, Jung Ho
|e verfasserin
|4 aut
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|a Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots
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|c 2013
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 23.09.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Han, Jeong Hwan
|e verfasserin
|4 aut
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|a Jung, Ji Sim
|e verfasserin
|4 aut
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|a Jeon, Woojin
|e verfasserin
|4 aut
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|a Kim, Gun Hwan
|e verfasserin
|4 aut
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|a Song, Seul Ji
|e verfasserin
|4 aut
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|a Seok, Jun Yeong
|e verfasserin
|4 aut
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|a Yoon, Kyung Jean
|e verfasserin
|4 aut
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|a Lee, Min Hwan
|e verfasserin
|4 aut
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|a Hwang, Cheol Seong
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 14 vom: 11. Apr., Seite 1987-92
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:25
|g year:2013
|g number:14
|g day:11
|g month:04
|g pages:1987-92
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