Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots

Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 14 vom: 11. Apr., Seite 1987-92
1. Verfasser: Yoon, Jung Ho (VerfasserIn)
Weitere Verfasser: Han, Jeong Hwan, Jung, Ji Sim, Jeon, Woojin, Kim, Gun Hwan, Song, Seul Ji, Seok, Jun Yeong, Yoon, Kyung Jean, Lee, Min Hwan, Hwang, Cheol Seong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM
Beschreibung:Date Completed 23.09.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201204572