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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201202446
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|a eng
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|a Bahlke, Matthias E
|e verfasserin
|4 aut
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|a Dry lithography of large-area, thin-film organic semiconductors using frozen CO(2) resists
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|c 2012
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|a Text
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|a ƒaComputermedien
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|a Date Completed 07.05.2013
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|a Date Revised 21.10.2021
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO(2) resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO(2) is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown
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|a Journal Article
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Coordination Complexes
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|a Mendoza, Hiroshi A
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|a Ashall, Daniel T
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|a Yin, Allen S
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|a Baldo, Marc A
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|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 46 vom: 04. Dez., Seite 6136-40
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