Dry lithography of large-area, thin-film organic semiconductors using frozen CO(2) resists

Dry lithography of large-area, thin-film organic semiconductors using frozen CO(2) resists

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 46 vom: 04. Dez., Seite 6136-40
1. Verfasser: Bahlke, Matthias E (VerfasserIn)
Weitere Verfasser: Mendoza, Hiroshi A, Ashall, Daniel T, Yin, Allen S, Baldo, Marc A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, U.S. Gov't, Non-P.H.S. Coordination Complexes Tin Compounds Carbon Dioxide 142M471B3J Iridium 44448S9773 indium tin oxide 71243-84-0
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO(2) resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO(2) is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown
Beschreibung:Date Completed 07.05.2013
Date Revised 21.10.2021
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201202446