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|a eng
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|a Gilbertson, A M
|e verfasserin
|4 aut
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|a Room temperature ballistic transport in InSb quantum well nanodevices
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|c 2011
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Date Revised 21.10.2021
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6) A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions
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|a Journal Article
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|a Kormányos, A
|e verfasserin
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|a Buckle, P D
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|a Fearn, M
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|a Ashley, T
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|a Lambert, C J
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|a Solin, S A
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|a Cohen, L F
|e verfasserin
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|i Enthalten in
|t Applied physics letters
|d 1998
|g 99(2011), 24 vom: 12. Dez., Seite 242101-2421013
|w (DE-627)NLM098165984
|x 0003-6951
|7 nnns
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| 773 |
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|g volume:99
|g year:2011
|g number:24
|g day:12
|g month:12
|g pages:242101-2421013
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|d 99
|j 2011
|e 24
|b 12
|c 12
|h 242101-2421013
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