Room temperature ballistic transport in InSb quantum well nanodevices
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a neg...
| Veröffentlicht in: | Applied physics letters. - 1998. - 99(2011), 24 vom: 12. Dez., Seite 242101-2421013 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2011
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| Zugriff auf das übergeordnete Werk: | Applied physics letters |
| Schlagworte: | Journal Article |
| Zusammenfassung: | We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6) A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions |
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| Beschreibung: | Date Revised 21.10.2021 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 0003-6951 |