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231224s2011 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201103379
|2 doi
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|a eng
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|a Miao, Feng
|e verfasserin
|4 aut
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|a Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor
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|c 2011
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|a Text
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|a ƒaComputermedien
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|a Date Completed 29.03.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Strachan, John Paul
|e verfasserin
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|a Yang, J Joshua
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|a Zhang, Min-Xian
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|a Goldfarb, Ilan
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|a Torrezan, Antonio C
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|a Eschbach, Peter
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|a Kelley, Ronald D
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|a Medeiros-Ribeiro, Gilberto
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|a Williams, R Stanley
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 23(2011), 47 vom: 15. Dez., Seite 5633-40
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