Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 47 vom: 15. Dez., Seite 5633-40
1. Verfasser: Miao, Feng (VerfasserIn)
Weitere Verfasser: Strachan, John Paul, Yang, J Joshua, Zhang, Min-Xian, Goldfarb, Ilan, Torrezan, Antonio C, Eschbach, Peter, Kelley, Ronald D, Medeiros-Ribeiro, Gilberto, Williams, R Stanley
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2011
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Oxides Tantalum 6424HBN274 tantalum oxide OEZ64Z53M4
Beschreibung
Zusammenfassung:Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism
Beschreibung:Date Completed 29.03.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201103379