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231224s2011 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2011.1997
|2 doi
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|a pubmed25n0703.xml
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|a (NLM)21859589
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|a DE-627
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|e rakwb
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|a eng
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1 |
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|a Laksana, Chipta
|e verfasserin
|4 aut
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|a Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires
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|c 2011
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 23.11.2011
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|a Date Revised 23.08.2011
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators
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|a Letter
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|a Research Support, Non-U.S. Gov't
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|a Chen, Meei-Ru
|e verfasserin
|4 aut
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|a Liang, Yen
|e verfasserin
|4 aut
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|a Tzou, An-Jyeg
|e verfasserin
|4 aut
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|a Kao, Hui-Ling
|e verfasserin
|4 aut
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|a Jeng, Erik
|e verfasserin
|4 aut
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|a Chen, Jyh
|e verfasserin
|4 aut
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|a Chen, Hou-Guang
|e verfasserin
|4 aut
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|a Jian, Sheng-Rui
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 58(2011), 8 vom: 19. Aug., Seite 1688-93
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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| 773 |
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|g volume:58
|g year:2011
|g number:8
|g day:19
|g month:08
|g pages:1688-93
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|u http://dx.doi.org/10.1109/TUFFC.2011.1997
|3 Volltext
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