Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires
High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An o...
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Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 58(2011), 8 vom: 19. Aug., Seite 1688-93
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| 1. Verfasser: |
Laksana, Chipta
(VerfasserIn) |
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| Weitere Verfasser: |
Chen, Meei-Ru,
Liang, Yen,
Tzou, An-Jyeg,
Kao, Hui-Ling,
Jeng, Erik,
Chen, Jyh,
Chen, Hou-Guang,
Jian, Sheng-Rui |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2011
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Letter
Research Support, Non-U.S. Gov't |
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