Multilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons

Multilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 18 vom: 10. Mai, Seite 2064-8
Auteur principal: Lee, Jang-Sik (Auteur)
Autres auteurs: Kim, Yong-Mu, Kwon, Jeong-Hwa, Sim, Jae Sung, Shin, Hyunjung, Sohn, Byeong-Hyeok, Jia, Quanxi
Format: Article en ligne
Langue:English
Publié: 2011
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't
Description
Description:Date Completed 26.08.2011
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201004150